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PDF SP8007 Data sheet ( Hoja de datos )
| Número de pieza | SP8007 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP8007 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP8007
Ver 1.0
PRODUCT SUMMARY
VDSS
24V
ID RDS(ON) (mΩ) Max
3.8 @ VGS=4.5V
3.9 @ VGS=4.0V
27A 4.6 @ VGS=3.7V
5.1 @ VGS=3.1V
5.9 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
24
±12
27
21.6
81
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,08,2013
www.samhop.com.tw
1 page  
SP8007
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
ID = 13.5 A
8 VGS = 2.5 V
3.1 V
3.7 V
6 4.0 V
4.5 V
4
2
0
-50 0 50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off) tr
100 tf
td(on)
10
VDD = 20.0 V
VGS = 4.5 V
RG = 6 Ω
1
0.1
1
ID - Drain Current - A
10
4
VDD = 5 V
3
12 V
20 V
2
1
ID = 27 A
0
0 8 16 24 32 40
QG - Gate Charge -nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 0 V
100
10
1
0.1
0.01
0
0.3 0.6 0.9 1.2 1.5 1.8
VF(S-D) - Source to Drain Voltage - V
Jul,08,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP8007.PDF ] | |
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