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Número de pieza | AP3310GJ-HF | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP3310GJ-HF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP3310GH/J-HF
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
GD
S TO-252(H)
This device is suited for low voltage and battery power applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5.0
62.5
110
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200902096
1 page 5
I D =-2.8A
V DS =-6V
4
3
2
1
0
02468
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
AP3310GH/J-HF
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 3 5 7 9 11 13
-V DS (V)
Fig 10. Typical Capacitance Characteristics
10
T j =150 o C
T j =25 o C
1
1.5
1
0.5
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP3310GJ-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP3310GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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