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PDF AP20P02GH-3 Data sheet ( Hoja de datos )
| Número de pieza | AP20P02GH-3 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP20P02GH/J-3
P-channel Enhancement-mode Power MOSFET
2.5V Gate Drive Capability
Simple Drive Requirement
Fast Switching Characteristic
RoHS-compliant
D
BV DSS
-20V
RDS(ON)
52mΩ
G ID -18A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP20P02GH-3 is in the TO-252 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP20P02GJ-3 is in the TO-251 through-hole package which is
used where a small PCB footprint or an attached heatsink is required.
Absolute Maximum Ratings
GDS
TO-252 (H)
G
D
S
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
-20
+12
-18
-14
-50
31.25
0.25
-55 to 150
-55 to 150
Value
4.0
110
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
Ordering Information
AP20P02GH-3TR
AP20P02GJ-3TB
RoHS-compliant TO-252, shipped on tape and reel (3000 pcs/reel)
RoHS-compliant TO-251, shipped in tubes
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200212253-3 1/6
1 page  
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
AP20P02GH/J-3
8
I D = -8A
V DS = -16V
6
4
2
0
0 5 10 15
Q G , Total Gate Charge (nC)
20
Fig 9. Gate Charge Characteristics
10000
1000
100
f=1.0MHz
Ciss
Coss
Crss
10
1 7 13 19
-V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0
0.2 0.5 0.8 1.1 1.4
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
1.2
0.9
0.6
0.3
0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
3/6
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| PDF Descargar | [ Datasheet AP20P02GH-3.PDF ] | |
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