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PDF AP1RC03GMT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP1RC03GMT-HF | |
| Descripción | N-channel Enhancement mode Power MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP1RC03GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
D
Description
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK ® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
BVDSS
RDS(ON)
ID
30V
0.99mΩ
260A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), VGS @ 10V4
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
260
57.6
46
300
104
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
℃/W
℃/W
1
201304102
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP1RC03GMT-HF.PDF ] | |
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