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PDF APTGT150H120 Data sheet ( Hoja de datos )

Número de pieza APTGT150H120
Descripción IGBT Power Module
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! APTGT150H120 Hoja de datos, Descripción, Manual

APTGT150H120
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Q1
G1
VBUS
Q3
E1 OUT1 OUT2
Q2
G2
Q4
E2
0/VBUS
G1 VBUS
E1
E3
G3
OUT1
0/VBUS
OUT2
Application
Welding converters
Switched Mode Power Supplies
G3 Uninterruptible Power Supplies
Motor control
E3 Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
G4
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E4 - Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
G2 Benefits
E2 Stable temperature behavior
Very rugged
E4 Direct mounting to heatsink (isolated package)
G4 Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
220
150
350
±20
690
300A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGT150H120 pdf
APTGT150H120
Operating Frequency vs Collector Current
60
50
40 ZCS
30
ZVS
VCE=600V
D=50%
RG=2.2
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250 TJ=25°C
200
150 TJ=125°C
100
50 TJ=125°C
TJ=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
0.35
0.3
0.9
0.25 0.7
0.2 0.5
0.15
0.1
0.3
0.05
0.1
0.05
0
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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