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PDF SSM4880AGM Data sheet ( Hoja de datos )
| Número de pieza | SSM4880AGM | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM4880AGM
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Fast switching, planar construction
Simple drive requirement
Description
D
D
D
D
SO-8
G
S
S
S
BV DSS
R DS(ON)
ID
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
G
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and the SSM4880AGM is well suited for
for low-voltage applications such as DC/DC converters.
Pb-free lead finish (second-level interconnect)
30V
9mΩ
13A
D
SS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
13
10
50
2.5
0.02
266
7.3
-55 to 150
-55 to 150
Max.
Value
50
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Unit
°C/W
3/08/2005 Rev.2.2
www.SiliconStandard.com
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1 page  
SSM4880AGM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/08/2005 Rev.2.2
www.SiliconStandard.com
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