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Número de pieza | SSM6J410TU | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6J410TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ)
SSM6J410TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
• 4-V drive
• Low ON-resistance
RDS(ON) = 393mΩ (max) (@VGS = –4 V)
RDS(ON) = 216mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS -30 V
Gate-Source voltage
Drain current
Power dissipation
DC
Pulse
VGSS
ID (Note1)
IDP(Note1)
PD(Note2)
t = 10s
± 20
-2.1
-4.2
500
1000
V
A
mW
1,2,5,6 : Drain
3 : Gate
4 : Source
Channel temperature
Storage temperature range
Tch 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
654
KPG
123
Equivalent Circuit (top view)
654
123
1
2010-01-19
1 page rth – tw
1000
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM6J410TU
1000
800
600
DC
400
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm,
Cu Pad : 645 mm2)
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2010-01-19
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6J410TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6J410TU | Field Effect Transistor | Toshiba Semiconductor |
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