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Número de pieza | SSM6J213FE | |
Descripción | Field Effect Transistor Silicon | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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No Preview Available ! SSM6J213FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J213FE
○ Power Management Switch Applications
• 1.5-V drive
• Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID (Note 1)
IDP (Note 1)
PD (Note 2)
t = 10s
Tch
Tstg
Rating
-20
±8
-2.6
-5.2
500
700
150
−55 to 150
Unit
V
V
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
ES6
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1J
Weight : 3mg ( typ. )
Marking (Top View)
654
PS
123
Equivalent Circuit
654
123
1 2010-11-29
1 page 1000
Rth – tw
100
10
1
0.001
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm
×
1.6
mm,
Cu
Pad:
645
mm2)
0.01
0.1
1
10 100 1000
Pulse Width tw (s)
SSM6J213FE
600
500
400
300
200
100
0
0
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm2)
50 100
Ambient temperature Ta (°C)
150
5 2010-11-29
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6J213FE.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6J213FE | Field Effect Transistor Silicon | Toshiba Semiconductor |
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