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Número de pieza | TSM2611ED | |
Descripción | 20V Dual N-Channel MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM2611ED (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TSM2611ED
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26
Pin Definition:
1. Source 1 6. Gate 1
2. Drain 1 5. Drain 2
3. Source 2 4. Gate 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
20 @ VGS = 4.5V
20
28 @ VGS = 2.5V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On resistance
● ESD Protected HBM 2KV
Block Diagram
Application
● Portable Applications
● Battery Management
Ordering Information
Part No.
Package Packing
TSM2611EDCX6 RFG SOT-26 3Kpcs / 7” Reel
`
Note: “G” denotes Halogen Free Product.
Dual N-Channel MOSFET
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC
TA=100oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ
TJ, TSTG
20
±10
6
22
1
0.83
0.3
+150
-55 to +150
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in2 pad, t ≤ 10 sec.
Symbol
RӨJC
RӨJA
Limit
80
150
ID (A)
6
5
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A11
1 page TSM2611ED
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
MILLIMETERS
DIM MIN TYP MAX
INCHES
MIN TYP MAX
A 0.95 BSC
0.0374 BSC
A1 1.9 BSC
0.0748 BSC
B 2.60 2.80 3.00 0.1024 0.1102 0.1181
C 1.40 1.50 1.70 0.0551 0.0591 0.0669
D 2.80 2.90 3.10 0.1101 0.1142 0.1220
E 1.00 1.10 1.20 0.0394 0.0433 0.0472
F 0.00 -- 0.10 0.00
0.0039
G 0.35 0.40 0.50 0.0138 0.0157 0.0197
H 0.10 0.15 0.20 0.0039 0.0059 0.0079
I 0.30 -- 0.60 0.0118 -- 0.0236
J 5º -- 10º 5º
-- 10º
5/6 Version: A11
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TSM2611ED.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM2611ED | 20V Dual N-Channel MOSFET | Taiwan Semiconductor |
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