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PDF SPP80P06PH Data sheet ( Hoja de datos )
| Número de pieza | SPP80P06PH | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SPP80P06P H
SIPMOS® Power-Transistor
Features
Product Summary
• P-Ch·aPnn-Cehl annel
Drain source voltage
• Enha·nEcnehmaennctemmoednet mode
•
•
Advv/adlta·rnAactvheaedlarnactehde
rated
• 175°·Cdovp/detraratitnegdtemperature
Drain-source on-state resistance
Continuous drain current
• Pb-fr·ee17le5a°Cd polpaetirnagti;nRgotHems pceormaptuliraent
• Qualified according to AEC Q101
° Halogen-free according to IEC61249-2-21
VDS
RDS(on)
ID
-60
0.023
-80
V
W
A
Type
SPP80P06P H
Package Lead free
PG-TO220-3 Yes
Pin 1 PIN 2/4 PIN 3
GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
WID = -80 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS = -80 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-80
-64
-320
823
34
6
±20
340
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A
Rev 1.5
Page 1
2011-09-01
1 page  
Power dissipation
Ptot = f (TC)
SPP80P06P
360
W
280
240
200
160
120
80
40
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 3 SPP80P06P
A tp = 14.0µs
Drain current
ID = f (TC)
³parameter: VGS 10 V
SPP80P06P
-90
A
SPP80P06P H
-70
-60
-50
-40
-30
-20
-10
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
SPP80P06P
10 1
K/W
10 0
-10 2
-10 1
100 µs
1 ms
10 ms
DC
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
0
-10
-1
Rev 1.5
-10 0
-10 1
V -10 2
VDS
Page 5
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
2011-09-01
5 Page 
SPP80P06P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev 1.5
Page 11
2011-09-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SPP80P06PH.PDF ] | |
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