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PDF MMBT2907AK Data sheet ( Hoja de datos )
| Número de pieza | MMBT2907AK | |
| Descripción | PNP Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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MMBT2907AK
PNP Epitaxial Silicon Transistor
General Purpose Transistor
3 Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2FK
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Value
-60
-60
-5
-600
350
-55 ~ 150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage *
VBE (sat) Base-Emitter Saturation Voltage *
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
IC = -10µA, IE = 0
IC = -10mA, IB = 0
IE = -10µA, IC = 0
VCB = -50V, IE = 0
VCE = -10V, IC = -0.1mA
VCE = -10V, IC = -1.0mA
VCE = -10V, IC = -10mA
VCE = -10V, IC = -150mA *
VCE = -10V, IC = -500mA *
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -50mA, VCE = -20V, f = 100MHz
VCB = -10V, IE = 0, f = 1.0MHz
VCC = -30V, IC = -150mA
IB1 = -15mA
VCC = -6V, IC = -150mA
IB1 = IB2 = -15mA
Min.
-60
-60
-5
75
100
100
100
50
200
Units
V
V
V
mA
mW
°C
Max.
-0.01
Units
V
V
V
µA
300
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
8 pF
50 ns
110 ns
©2006 Fairchild Semiconductor Corporation
MMBT2907AK Rev. B
1
www.fairchildsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT2907AK.PDF ] | |
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