|
|
PDF STP60NE06L-16FP Data sheet ( Hoja de datos )
| Número de pieza | STP60NE06L-16FP | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP60NE06L-16FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
STP60NE06L-16
® STP60NE06L-16FP
N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TY PE
V DSS
RDS (on)
ID
STP60N E06L- 16
60 V <0 .016 Ω 60 A
STP60N E06L- 16F P 60 V <0 .016 Ω 35 A
s TYPICAL RDS(on) = 0.014 Ω
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb ol
Parameter
V DS
V DGR
VGS
ID
ID
IDM (•)
Pto t
Drain-source Volt age (VGS =0 )
Dr ain- gat e Vol tage (RGS =2 0 kΩ)6
Gate-source Voltage
Dr ain Current (cont inuous ) at Tc =2 5 oC6
Dr ain Current (cont inuous ) at Tc =1 00 oC4
Drain Cur rent (puls ed)
Tot al Dissipation at Tc =2 5 oC1
Der ating F actor
VISO Ins ulat ion Withstand Volt age (DC)
dv /dt Pea k Dio de Re cover y volt age slope
Tst g Storage Tem per ature
Tj Max . Operating Junc tion Tempe ratur e
(•) Pulse width limited by safe operating area
May 2000
V a l ue
Un it
STP60N E06L -16 STP60NE 06L-16 FP
60 V
0V
± 15
V
0 35 A
2 24 A
240 140 A
50 45 W
1 0. 3 W /oC
2 000
V
6
-65 to 175
1 75
( 1)I SD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,T j ≤ TJMAX
V/ ns
oC
oC
1/9
http://www.Datasheet4U.com
1 page  
Gate Charge vs Gate-source Voltage
STP60NE06L-16/FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP60NE06L-16FP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP60NE06L-16FP | N-CHANNEL POWER MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |