PDF AN11158 Data sheet ( Hoja de datos )

Número de pieza	AN11158
Descripción	Understanding power MOSFET data sheet parameters
Fabricantes	NXP Semiconductors
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No Preview Available ! AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters http://www.Datasheet4U.com 1 page NXP Semiconductors AN11158 Understanding power MOSFET data sheet parameters Table 2. Pinning Pin Symbol Description 1S source 2S source 3S source 4G gate mb D mount base: connected to drain Simplified outline Graphic symbol mb D 1234 G mbb076 S 2.3 Ordering information The ordering section provides information on how to order the device. 2.4 Limiting values The limiting values table provides the range of operating conditions allowed for the MOSFET. The conditions are defined in accordance with the absolute maximum rating system (IEC60134). Operation outside of these conditions is not guaranteed, so it is recommended that these values are not exceeded. Doing so runs the risk of immediate device failure or reduced lifetime of the MOSFET. The avalanche ruggedness conditions, when given, describe the limited conditions for which the VDS rating can be exceeded. To calculate how the limiting values change with temperature, they are read together with the derating curves provided. The limiting values table for the BUK7Y12-55B is given as an example of a standard limiting values table, in Table 3. Table 3. Limiting values In accordance with the absolute maximum rating system IEC 60134 Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tj  25C; Tj  175C RGS = 20 k VGS = 10 V; Tmb = 25C; Table 1; Figure 1 VGS = 10 V; Tmb = 100C; Table 1 IDM peak drain current VGS = 10 V; Tmb = 25C; pulsed; Figure 1 Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25C IS source current Tmb = 25C ISM peak source current tp  10 s; pulsed; Tmb =2 5C Min Typ Max - - 55 --5 5 20 - +20 - - 61.8 Unit V V V A - - 43.7 A - - 247 A -- 55 - 55 - 105 W +175 C +175 C - - 61.8 A - - 247 A AN11158 Application note All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 February 2014 © NXP B.V. 2014. All rights reserved. 5 of 28 5 Page NXP Semiconductors AN11158 Understanding power MOSFET data sheet parameters 103 ID (A) 102 Limit RDSon = VDS / ID 10 1 DC tp = 10 μs 100 μs 1 ms 10 ms 100 ms 003aad475 10-1 1 10 102 103 VDS (V) Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage The SOA curves show the voltage allowed, the current and time envelope of operation for the MOSFET. These values are for an initial Tmb of 25 C and a single current pulse. This is a complex subject which is further discussed in the appendix (Section 3.1). 2.5 Thermal characteristics This section describes the thermal impedance as a function of pulse duration for different duty cycles. This information is required to determine the temperature that the silicon reaches under particular operating conditions, and whether it is within the guaranteed operation envelope. The thermal characteristics are shown in Figure 5. The thermal impedance changes with pulse length because the MOSFET is made from different materials. For shorter durations, the thermal capacity is more important, while for longer pulses, the thermal resistance is more important. The thermal characteristics are used to check whether particular power loading pulses above the DC limit would take Tj above its safe maximum limit. Repetitive avalanche pulses must be considered in addition to the constraints specific to avalanche and repetitive avalanche events. Table 4. Symbol Rth(j-mb) Characteristics table Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max Unit - - 1.42 K/W AN11158 Application note All information provided in this document is subject to legal disclaimers. Rev. 4 — 4 February 2014 © NXP B.V. 2014. All rights reserved. 11 of 28 11 Page

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