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Número de pieza | HTN2A60 | |
Descripción | NON INSULATED TYPE TRIAC | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ||
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HTN2A60
NON INSULATED TYPE TRIAC (TO-126 PACKAGE)
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=2A)
* High Commutation dv/dt
General Description
The Triac HTN2A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PGM Peak Gate Power Dissipation
VDRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-state Current Ta=66
VGM
IGM
ITSM
Peak Gate Voltage
Peak Gate Current
Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
Electrical Characteristics Ta=25
-40~125
-40~125
1.0W
600V
1.5A
6.0V
0.5A
13/15A
Symbol
IDRM
Items
Repetitive Peak Off-State Current
VTM
I+GT1
I- GT1
I- GT3
V+ GT1
V- GT1
V- GT3
VGD
(dv/dt)c
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
Gate Trigger Voltage
Non-trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
IH
Rth(j-c)
Holding Current
Thermal Resistance
Min. Typ. Max. Unit
Conditions
0.5 mA VD=VDRM,Single Phase,
Half Wave, TJ=125
1.6 V IT=2.1A, Inst.
Measurement
20 mA VD=6V, RL=10 ohm
20 mA VD=6V, RL=10 ohm
20 mA VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
0.2 V TJ=125 ,VD=1/2VDRM
5.0 V/µS TJ=125 ,VD=2/3VDRM
(di/dt)c= -0.75A/ms
5.0
6.25
mA
/W Junction to case
Free Datasheet http://www.datasheet4u.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet HTN2A60.PDF ] |
Número de pieza | Descripción | Fabricantes |
HTN2A60 | NON INSULATED TYPE TRIAC | HUASHAN ELECTRONIC |
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