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Número de pieza | BSZ160N10NS3G | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSZ160N10NS3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
BSZ160N10NS3 G
Product Summary
V DS
R DS(on),max
ID
100 V
16 mΩ
40 A
PG-TSDSON-8
Type
BSZ160N10NS3 G
Package
PG-TSDSON-8
Marking
160N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
40 A
28
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
8
Pulsed drain current3)
I D,pulse T C=25 °C
160
Avalanche energy, single pulse4) E AS I D=20 A, R GS=25 Ω
80 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 1.2
page 1
2009-11-12
Free Datasheet http://www.datasheet4u.com/
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
9V 7V
10 V 8 V
80
6V
60
5.5 V
40
5V
20 4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
4
BSZ160N10NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
40
36
32
28 5 V
24
20
V 5.5
V6
16
7V
8V
9V
10 V
12
8
4
0
5 0 20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
60 30
40 20
20 10
150 °C
25 °C
0
01234567
V GS [V]
0
0
Rev. 1.2
page 5
10 20 30 40 50
I D [A]
2009-11-12
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSZ160N10NS3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSZ160N10NS3G | Power MOSFET ( Transistor ) | Infineon |
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