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PDF BSB028N06NN3G Data sheet ( Hoja de datos )
| Número de pieza | BSB028N06NN3G | |
| Descripción | n-Channel Power MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BSB028N06NN3 G
OptiMOS™3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• Dual sided cooling
• low parasitic inductance
Product Summary
VDS
RDS(on),max
ID
60
2.8
90
CanPAKTM M
MG-WDSON-2
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Compatible with DirectFET® package MN footprint and outline2)
V
mW
A
Type
BSB028N06NN3 G
Package
MG-WDSON-2
Outline
MN
Marking
0106
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
85
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
22
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS I D=30 A, R GS=25 W
590
Gate source voltage
V GS
±20
1) J-STD20 and JESD22
2) DirectFET® is a trademark of International Rectfier Corporation
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Unit
A
mJ
V
Rev. 2.0
page 1
2014-04-17
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
360
8V
10 V
7V
320
280
240
6V
200
160
5.5 V
120
80
40
0
0
5V
4.5V
12
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
BSB028N06NN3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
5 V 5.5 V
6V
6
4
7V
8V
10V
2
0
3 0 40 80 120 160 200 240 280 320
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
160
120
120
80
80
150 °C
40
40 25 °C
0
0
Rev. 2.0
246
VGS [V]
0
80
page 5
40 80
ID [A]
120
2014-04-17
5 Page 
BSB028N06NN3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2014-04-17
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSB028N06NN3G.PDF ] | |
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