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PDF 2SC2223 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2223 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC2223
Features
Micro package.
High gain bandwidth product fT=600MHz TYP
Low output capacitance. Cob=1.0PF TYP
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
30
20
4
20
150
125
-55 to +125
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base-emitter voltage
Collector-emitter saturation voltage
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
Testconditons
ICBO VCB = 25V, IE=0
IEBO VEB = 3.0V, IC=0
hFE VCE = 6.0V , IC = 1mA
VBE IC = 10mA , IB = 1.0mA
VCE(sat) IC = 10mA , IB = 1.0mA
fT VCE = 6.0V , IE = -1.0mA
Cob VCB = 6.0V , IE = 0 , f = 1.0MHz
Cc-rb'b VCE = 6.0V, IE = -1.0mA, f = 31.9MHz
NF
VCE = 6.0V, IE = -1.0mA, RG = 50Ù,
f = 100MHz
Min Typ Max Unit
100 nA
100 nA
40 90 180
0.72 V
0.1 0.3 V
400 600
MHz
1.0 pF
12 ps
3 dB
hFE Classification
Marking
hFE
F12
40 80
F13
60 120
F14
90 180
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC2223.PDF ] | |
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