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PDF 2SB1188 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1188 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SB1 1 8 8
TRANSISTOR(PNP)
SOT-89
FEATURES
1. BASE
z Low VCE(sat).
z Complements the 2SD1766
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
2. COLLECTOR1
2
3. EMITTER
3
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-32 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-2 A
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
500
150
-55-150
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=-50μA , IE=0
V(BR)CEO IC= -1mA , IB=0
-40
-32
V
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-20 V , IE=0
-5 V
-1 μA
Emitter cut-off current
IEBO VEB=-4 V , IC=0
-1 μA
DC current gain *
hFE VCE=-3V, IC= -0.5A
82 390
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
BCP
VCE(sat)
fT
Cob
IC=-2A, IB= -0.2A
VCE=-5V, IC=-0.5A ,f=30MHz
VCB=-10V, IE=0 ,f=1MHz
Q
120-270
BCQ
-0.8 V
100 MHz
50 pF
R
180-390
BCR
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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