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PDF AUIRF7313Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7313Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
PD - 97751
AUIRF7313Q
HEXFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID
30V
23mΩ
29mΩ
6.9A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7313Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Thermal Resistance
RθJL
RθJA
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
Junction-to-Drain Lead
ghJunction-to-Ambient
Max.
30
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
Max.
20
62.5
Units
V
A
W
W/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.dat1a/s5h/1e2et4u.com/
1 page  
100
10 TJ = 175°C
1000
100
10
AUIRF7313Q
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
1ms
10ms
1 TJ = 25°C
VGS = 0V
0.1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
7
6
5
4
3
2
1
0
25
50 75 100 125 150
TA , Ambient Temperature (°C)
175
Fig 9. Maximum Drain Current Vs. Ambient Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
1
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.10
1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2000
1600
ID
TOP
1.0A
1.6A
BOTTOM 3.5A
1200
800
400
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 10. Maximum Avalanche Energy vs. DrainCurrent
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7313Q.PDF ] | |
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