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PDF PTFA091201GL Data sheet ( Hoja de datos )
| Número de pieza | PTFA091201GL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
PTFA091201GL
PTFA091201HL
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs
designed for ultra-linear GSM/EDGE power amplifier applications in
the 920 to 960 MHz band. Features include input and output matching,
and thermally-enhanced plastic open-cavity packages with copper
flanges. Manufactured with Infineon's advanced LDMOS process,
these devices provide excellent thermal performance and superior
reliability.
PTFA091201GL
Package PG-63248-2
PTFA091201HL
Package PG-64248-2
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz
0 55
-10 50
-20 45
Efficiency
-30 40
-40 35
-50 400 KHz
-60
30
25
-70 20
-80 600 KHz 15
-90 10
36 38 40 42 44 46 48 50
Output Power, avg. (dBm)
Features
• Thermally-enhanced plastic open-cavity (EPOC™)
packages with copper flanges, Pb-free and RoHS
compliant
• Broadband internal matching
• Typical EDGE performance
- Average output power = 50 W
- Gain = 18.5 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 135 W
- Gain = 17 dB
- Efficiency = 64%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
120 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 50 W (AVG), ƒ = 959.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
— –60
—
dBc
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
ACPR
Gps
ηD
— –74
— 18.5
— 44
—
—
—
dBc
dB
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2008-08-27
Free Datasheet http://www.datasheet4u.com/
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.4 A
1.2 A
3.0 A
6.0 A
9.0 A
12.0 A
16.0 A
0 20 40 60 80
Case Temperature (°C)
100
PTFA091201GL
PTFA091201HL
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
920
930
940
950
960
Z Source Ω
R jX
5.86
–0.32
5.84
–0.27
5.85
–0.02
5.82
0.10
5.79
0.27
Z Load
960 MHz
920 MHz
Z Source
960 MHz
920 MHz
Z Load Ω
R jX
2.20
0.69
2.17
0.69
2.16
0.85
2.15
0.92
2.13
1.02
Z0 = 50 Ω
Data Sheet
0.1
5 of 10
Rev. 02, 2008-08-27
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA091201GL.PDF ] | |
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