PDF PTFA071701F Data sheet ( Hoja de datos )

Número de pieza	PTFA071701F
Descripción	Thermally-Enhanced High Power RF LDMOS FETs
Fabricantes	Infineon
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No Preview Available ! Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E* Package H-36248-2 PTFA071701F* Package H-37248-2 PTFA071701E PTFA071701F Two-tone Drive-up VDD = 30 V, IDQ = 900 m A, ƒ = 765 MHz, tone spacing = 1 MHz -20 -25 -30 IM3 -35 -40 IM5 -45 Efficiency -50 -55 -60 IM7 -65 44 46 48 50 52 Output Power, PEP (dBm) 60 55 50 45 40 35 30 25 20 15 54 Features • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc • Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 165 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Adjacent Channel Power Ratio Gps ηD ACPR — 18.5 — 32 — –36 — — — dB % dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2009-11-11 Free Datasheet http://www.datasheet4u.com/ 1 page Confidential, Limited Internal Distribution Reference Circuit PTFA071701E PTFA071701F 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 BCP56 C2 0.001µF C3 0.001µF R3 2K V R4 2K V R5 2K V VDD R6 5.1K V R7 10 V C4 0.1µF C5 10µF 35V R8 5.1K V C6 4.7µF C7 0.1µF C8 62pF l4 L1 C12 C13 C14 62pF 2.2µF 10µF 50V l6 C15 0.1µF C16 10µF 50V VDD C9 62pF J1 l1 l2 l3 R9 10 V l5 DUT l8 C10 3.9pF C11 6.2pF l7 C22 3.3pF C24 62pF l9 l10 l11 l12 J2 C23 3.3pF L2 C17 62pF C18 2.2µF C19 10µF 50V C20 0.1µF C21 10µF 50V Reference circuit schematic for ƒ = 770 MHz Circuit Assembly Information DUT PTFA071701E or PTFA071701F PCB 0.76 mm [.030"] thick, εr = 3.48 Microstrip l1 l2 l3 l4 l5 l6, l7 l8 l9 (taper) l10 (taper) l11 l12 Electrical Characteristics at 770 MHz 0.025 λ, 50.7 Ω 0.053 λ, 38.4 Ω 0.035 λ, 38.4 Ω 0.148 λ, 76.7 Ω 0.094 λ, 7.8 Ω 0.103 λ, 44.5 Ω 0.139 λ, 8.4 Ω 0.062 λ, 8.4 Ω / 33.8 Ω 0.002 λ, 33.8 Ω / 38.4 Ω 0.005 λ, 38.4 Ω 0.016 λ, 50.7 Ω LDMOS Transistor Rogers RO4350 1 oz. copper Dimensions: L x W ( mm) 5.84 x 1.65 12.32 x 2.54 8.00 x 2.54 35.94 x 0.76 20.32 x 17.78 24.13 x 2.03 29.97 x 16.51 13.46 x 16.51 / 3.05 0.51 x 3.05 / 2.54 1.27 x 2.54 3.76 x 1.65 Dimensions: L x W (in.) 0.230 x 0.065 0.485 x 0.100 0.315 x 0.100 1.415 x 0.030 0.800 x 0.700 0.950 x 0.080 1.180 x 0.650 0.530 x 0.650 / 0.120 0.020 x 0.120 / 0.100 0.050 x 0.100 0.148 x 0.065 Data Sheet 5 of 9 Rev. 03, 2009-11-11 5 Page

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