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PDF SI7900AEDN Data sheet ( Hoja de datos )
| Número de pieza | SI7900AEDN | |
| Descripción | Dual N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
Si7900AEDN
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.026 @ VGS = 4.5 V
20 0.030 @ VGS = 2.5 V
0.036 @ VGS = 1.8 V
PowerPAK 1212-8
ID (A)
8.5
8
7
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakr Package
- Low-Thermal Resistance, RthJC
- Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
DD
3.30 mm
D
8D
7D
6D
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7900AEDN-T1
G1
2.6 kW
N-Channel
S1
http://www.DataSheet4U.net/
2.6 kW
G2
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
8.5 6
6.4 4.3
30
2.9 1.4
3.1 1.5
1.6 0.79
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72287
S-31418—Rev. A, 07-Jun-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
32
65
2.2
Maximum
40
82
2.8
Unit
_C/W
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/
1 page  
New Product
Si7900AEDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Square Wave Pulse Duration (sec)
0.1
1
http://www.DataSheet4U.net/
Document Number: 72287
S-31418—Rev. A, 07-Jun-03
www.vishay.com
5
datasheet pdf - http://www.DataSheet4U.net/
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