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PDF SSM60T03GJ Data sheet ( Hoja de datos )
| Número de pieza | SSM60T03GJ | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM60T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
12mΩ
45A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM60T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM60T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM60T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTG
TJ
Parameter
Drain-source voltage
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Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
30
±20
45
32
120
44
0.352
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
3.4
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5
datasheet pdf - http://www.DataSheet4U.net/
1 page  
SSM60T03GH,J
PHYSICAL DIMENSIONS
E
b3
A
e
GAUGE PLANE
A
c2
A
SEE VIEW B
WITH PLATING
b
BASE METAL
SECTION A-A
L
L1
VIEW B
SEATING PLANE
S
Y
M
B
O
L
A
A1
b
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
θ
PART MARKING
http://www.DataSheet4U.net/
TO-252-3L
MILLIMETERS
MIN.
1.80
0.00
0.40
4.80
0.35
0.40
5.10
6.00
2.30 BSC
7.80
1.00
2.20
0.35
0.50
0.50
0°
MAX.
2.80
0.13
1.00
5.90
0.65
0.89
6.30
7.00
11.05
2.55
3.05
0.65
2.03
1.20
8°
*Dimensions do not include mold protrusions.
PART NUMBER: 60T03GH or 60T03GJ
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in an antistatic bag packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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