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PDF SIB455EDK Data sheet ( Hoja de datos )
| Número de pieza | SIB455EDK | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 12-V (D-S) MOSFET
SiB455EDK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.027 at VGS = - 4.5 V
0.039 at VGS = - 2.5 V
- 12
0.069 at VGS = - 1.8 V
0.130 at VGS = - 1.5 V
ID (A)
- 9a
- 9a
- 9a
-3
Qg (Typ.)
11.3 nC
PowerPAK SC-75-6L-Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Performance 1500 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
Marking Code
APPLICATIONS
• Load Switch, PA Switch and Battery
Switch for Portable Devices
S
Part # code
BKX
XXX
Lot Traceability
and Date code
G
R
Ordering Information: SiB455EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
http://www.DataSheet4U.net/
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 12
± 10
- 9a
- 9a
- 7.8b, c
- 6.2b, c
- 25
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 15
16 12
12
Package Limited
8
9
6
43
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiB455EDK
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
http://www.DataSheet4U.net/
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIB455EDK.PDF ] | |
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