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PDF SIB408DK Data sheet ( Hoja de datos )
| Número de pieza | SIB408DK | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
SiB408DK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 10 V
30
0.050 at VGS = 4.5 V
ID (A)
7a
7a
Qg (Typ.)
2.9 nC
PowerPAK SC-75-6L-Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
D
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
APPLICATIONS
• Notebook
Marking Code
- Load Switch
Part # code
AEX
XXX
Lot Traceability
and Date code
G
S
Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
http://www.DataSheet4U.net/
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
7a
7a
6b, c
4.8b, c
20
7a
2b, c
10
5
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 64828
S09-0859-Rev. A, 18-May-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
16
12
8
4
0
0
SiB408DK
Vishay Siliconix
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
http://www.DataSheet4U.net/
Document Number: 64828
S09-0859-Rev. A, 18-May-09
www.vishay.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIB408DK.PDF ] | |
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