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PDF SM72295 Data sheet ( Hoja de datos )
| Número de pieza | SM72295 | |
| Descripción | Photovoltaic Full Bridge Driver | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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SM72295
February 25, 2011
Photovoltaic Full Bridge Driver
General Description
The SM72295 is designed to drive 4 discrete N type
MOSFET’s in a full bridge configuration. The drivers provide
3A of peak current for fast efficient switching and integrated
high speed bootstrap diodes. Current sensing is provided by
2 transconductance amplifiers with externally programmable
gain and filtering to remove ripple current to provide average
current information to the control circuit. The current sense
amplifiers have buffered outputs available to provide a low
impedance interface to an A/D converter if needed. An exter-
nally programmable input over voltage comparator is also
included to shutdown all outputs. Under voltage lockout with
a PGOOD indicator prevents the drivers from operating if
VCC is too low.
Features
■ Renewable Energy Grade
■ Dual Half Bridge MOSFET Drivers
■ Integrated 100V bootstrap diodes
■ Independent High and Low driver logic inputs
■ Bootstrap supply voltage range up to 115V DC
■ Two current sense amplifiers with externally
programmable gain and buffered outputs
■ Programmable over voltage protection
■ Supply rail under-voltage lockouts with power good
indicator
Package
■ SOIC-28
Typical Application Circuit
www.DataSheet.net/
© 2011 National Semiconductor Corporation 301341
30134101
www.national.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Symbol Parameter
Conditions
LO & HO GATE DRIVER
VOL
VOH
IOHL
IOLL
tLPHL
tLPLH
tHPHL
Low-Level Output Voltage
High-Level Output Voltage
Peak Pullup Current
ILO = 100mA
VOL = LO-PGND or HO-HS
ILO = -100mA
VOH = VCC-LO or VCC-HO
HO, LO = 12V
Peak Pulldown Current
HO, LO = 0V
LO Turn-Off Propagation Delay LI Falling to LO Falling
LO Turn-On Propagation Delay LI Rising to LO Rising
HO Turn-Off Propagation
Delay
HI Falling to HO Falling
tHPLH
tMON
LO Turn-On Propagation Delay HI Rising to HO Rising
Delay Matching: LO on & HO
off
tMOFF
Delay Matching: LO off & HO
on
tRC, tFC
tPW
Either Output Rise/Fall Time
Minimum Input Pulse Width
that Changes the Output
CL = 1000pF
tBS
Bootstrap Diode Turn-On or
Turn-Off Time
IF = 100mA/ IR = 100mA
CURRENT SENSE AMPLIFIER
VOS Offset voltage
RSI = RSO = 500, 10mV sense
resistor voltage
Gain 5mV
Gain
50mV
Gain is programmed with
external resistors
IOUT, IIN =(RL/RSI )* (SI-SO)
Gain is programmed with
external resistors
IOUT, IIN =(RL/RSI )* (SI-SO)
5mV sense resistor voltage
RSI = RSO = 1000, RL = 75K
www.DataSheet.net/
50mV sense resistor voltage
RSI = RSO = 1000, RL = 75K
Vclamp Output Clamp
CURRENT SENSE BUFFER
0.1V sense resistor voltage
RSI = RSO = 1000, RL = 75K
Offset voltage (BIN-IIN),
(BOUT-IOUT)
IIN = 2.5V
Output low voltage BOUT,BIN IIN, IOUT = 0
Output high voltage BOUT,BIN IIN, IOUT = VDD
THERMAL RESISTANCE
θJA Junction to Ambient
SOIC-28 (Note 3)
Min Typ
0.16
0.28
3
3
22
26
22
26
1
1
8
50
37
-2
390
3.85
VDD
-60
0
VDD-100mV VDD-30mV
60
Max
0.4
0.6
2
60
50
VDD
Units
V
V
A
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
mV
mV
V
V
mV
mV
mV
°C/W
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions,
see the Electrical Characteristics tables.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. 2 kV for all pins except HB, HO & HS which are rated
at 1000V.
Note 3: 2 layer board with 2 oz Cu using JEDEC JESD51 thermal board.
Note 4: Min and Max limits are 100% production tested at 25ºC. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 5: In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not exceed –1V.
However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur,
the HS voltage must never be more negative than VCC-15V. For example if VCC = 10V, the negative transients at HS must not exceed –5V.
5 www.national.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Physical Dimensions inches (millimeters) unless otherwise noted
20-Lead TSSOP Package
NS Package Number MXA20A
www.DataSheet.net/
11
www.national.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SM72295.PDF ] | |
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