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PDF AM40P20-150PCFM Data sheet ( Hoja de datos )
| Número de pieza | AM40P20-150PCFM | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
P-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and cordless telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TO-220CFM saves board space
• Fast switching speed
• High performance trench technology
AM40P20-150PCFM
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-200 150 @ VGS = -10V
280 @ VGS = -5.5V
ID (A)
37
27
TO-220CFM
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
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Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC ID
IDM
IS
TA=25oC PD
TJ, Tstg
-40
±20
37
±100
-30
300
-55 to 175
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM40P20-150PCFM_A
Datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 2 Páginas | |
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