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Advanced Power
Electronics Corp.
AP9916H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Low drive current
▼ Single Drive Requirement
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
18V
25mΩ
35A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=125℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200227032
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
AP9916H/J
16
14 I D =18A
12
10
8
V DS =10V
V DS =15V
V DS =18V
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100 Crss
10
1
5
9
V
13
DS
(V)
17
21
25
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.2
0.95
0.7
0.45
0.2
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Datasheet pdf - http://www.DataSheet4U.net/