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PDF APTLGF350A608G Data sheet ( Hoja de datos )
| Número de pieza | APTLGF350A608G | |
| Descripción | Phase leg Intelligent Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTLGF350A608G
Phase leg
Intelligent Power Module
www.DataSheet4U.net
VBUS
0/VBUS
OUT
VCES = 600V
IC = 350A @ Tc = 80°C
Application
• Motor control
• Uninterruptible Power Supplies
• Switched Mode Power Supplies
• Amplifier
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA & SCSOA rated
• Integrated Fail Safe IGBT Protection (Driver)
- Top Bottom input signals Interlock
- Isolated DC/DC Converter
• Low stray inductance
• M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very high noise immunity
(common mode rejection > 25kV/µs)
• Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
• 5V logic level with Schmitt-trigger Input
• Single VDD=5V supply required
• Secondary auxiliary power supplies internally generated
(15V, -6V)
• Optocoupler qualified to AEC-Q100 test quidelines
• RoHS compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
1 page  
Typical IGBT Performance Curve
Output characteristics
800
250µs Pulse Test
< 0.5% Duty cycle
600
TJ=25°C
TJ=125°C
400
200
VDD = 5V
VIN = 5V
0
0123
VCE, Collector to Emitter Voltage (V)
4
DC Collector Current vs Case Temperature
500
400
300
200
100
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Current Rise Time vs Collector Current
80
VCE = 400V
VDD = 5V
60 VIN = 5V
TJ=125°C
40
20
0
100
200 300 400 500
ICE, Collector to Emitter Current (A)
600
Turn-On Energy Loss vs Collector Current
32
VCE = 400V
VDD = 5V
24 VIN = 5V
TJ=125°C
16
TJ=25°C
8
0
100
200 300 400 500
ICE, Collector to Emitter Current (A)
600
APTLGF350A608G
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
25
50 75 100
TJ, Junction Temperature (°C)
125
1000
Reverse Bias Safe Operating Area
800
600
400
200
0
0 100 200 300 400 500 600
VCE, Collector to Emitter Voltage (V)
Current Fall Time vs Collector Current
80
VCE = 400V
VDD = 5V
60 VIN = 5V
TJ = 125°C
40
TJ = 25°C
20
0
100 200 300 400 500
ICE, Collector to Emitter Current (A)
600
Turn-Off Energy Loss vs Collector Current
24
VCE = 400V
20 VDD = 5V
VIN = 5V
TJ = 125°C
16
12 TJ = 25°C
8
4
0
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
www.microsemi.com
5-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTLGF350A608G.PDF ] | |
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