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PDF MD8IC970NR1 Data sheet ( Hoja de datos )
| Número de pieza | MD8IC970NR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD8IC970N wideband integrated circuit is designed with on--chip
prematching that makes it usable from 136 to 940 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical base station
modulation formats. This device has a 2--stage design with off--chip matching
for the input, interstage and output networks to cover the desired frequency
sub--band.
• Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts,
IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
IMD
(dBc)
850 MHz
900 MHz
940 MHz
30.6 40.1 --30.5
31.9 42.4 --31.0
32.6 42.1 --31.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW
www.DOautatSphuetetP4Uo.wneetr (3 dB Input
Enhanced Ruggedness
Overdrive
from
Rated
Pout),
Designed
for
• Typical Pout @ 1 dB Compression Point ≃ 79 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• On--Chip Prematching. On--Chip Stabilization.
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MD8IC970N
Rev. 2, 5/2011
MD8IC970NR1
MD8IC970GNR1
850--940 MHz, 35 W AVG., 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1866--02
TO--270 WBL--16
PLASTIC
MD8IC970NR1
CASE 1867--02
TO--270 WBL--16 GULL
PLASTIC
MD8IC970GNR1
RFin2A
RFout1A/VD1A
VG1A
RFin1A
VG2A
RFout1BR/VFiDn21BB
VG2B
RFin1B
Quiescent Current
Temperature Compensation (1)
RFout2A/VD2A
RFout2B/VD2B
RFout1AR/VFGiDnN21DAA
GND
VG1A
RVVFiGGn122AAB
RVFiGn11BB
GND
GND
RFout1B/VD1B
RFin2B
1
2
3
4 16
5
6
7
8
9
10 15
11
12
13
14
(Top View)
RFout2A/
VD2A
RFout2B/
VD2B
VG1B
Quiescent Current
Temperature Compensation (1)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MD8IC970NR1 MD8IC970GNR1
1
1 page  
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
36 44
35 PAE
42
34 40
33 38
32 Gps
36
31 --27
30
29
VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA
IDQ2(A+B) = 550 mA, Pout = 35 W (Avg.)
200 kHz Tone Spacing
--28
--29
28
27 IMD
--30
--31
26 --32
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 4. Two--Tone Broadband Performance
@ Pout = 35 Watts Avg.
--10
VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 71 W (PEP)
IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA
--20 Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 900 MHz
--30 IM3--U
IM3--L
IM5--U
--40 IM5--L
IM7--U
--50 IM7--L
--60
1
10 100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
35
VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA
34 IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
33 Gps
PAE
32
IMD
60
50
40
30
31 20
30 10
29 0
10 20 30 40 50 60
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain, Power Added Efficiency and
Intermodulation Distortion Products versus
Average Output Power
0
--10
--20
--30
--40
--50
--60
MD8IC970NR1 MD8IC970GNR1
5
5 Page 
RF Device Data
Freescale Semiconductor
MD8IC970NR1 MD8IC970GNR1
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet MD8IC970NR1.PDF ] | |
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