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PDF IXFB300N10P Data sheet ( Hoja de datos )
| Número de pieza | IXFB300N10P | |
| Descripción | Polar Power MOSFET HiPerFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB300N10P
VDSS = 100V
ID25
RDS(on)
=
≤
300A
5.5mΩ
trr ≤ 200ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Leads Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Maximum Ratings
100 V
100 V
±20 V
±30 V
300 A
75 A
900 A
100 A
3J
20
1500
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300 °C
260 °C
30..120/6.7..27
N/lb.
10 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Note 1
Characteristic Values
Min. Typ. Max.
100
V
3.0 5.0 V
±200 nA
25 μA
1.5 mA
5.5 mΩ
PLUS264TM (IXFB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Fast intrinsic diode
• Avalanche Rated
•
•
Low
Low
RDS(ON) and QG
package inductance
Advantages
z Easy to mount
z Space savings
z High power density
z Low gate drive requirement
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
applications
w©w20w08.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS100015(07/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFB300N10P.PDF ] | |
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