DataSheet.es    


PDF 2SK3658 Data sheet ( Hoja de datos )

Número de pieza 2SK3658
Descripción Silicon N Channel MOS Type DC-DC Converter
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SK3658 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! 2SK3658 Hoja de datos, Descripción, Manual

2SK3658
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK3658
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.23 (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancementmode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation
(Note 2)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
Tch
Tstg
60
60
±20
2
6
0.5
1.5
150
55 to 150
V
V
V
A
W
W
°C
°C
JEDEC
JEITA
2
1
3
SC-62
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
Rth (cha)
This transistor is an electrostatic sensitive device.
Please handle with caution.
Max
250
Unit
°C / W
Marking
www.DataSheet4U.cZom H
Lot no.
Product no. (abbr.)
Week of manufacture
Year of manufacture: last decimal digit of the year of manufacture
1 2006-11-17

1 page




2SK3658 pdf
2SK3658
www.DataSheet4U.com
5
2006-11-17

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet 2SK3658.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SK365Silicon N Channel Junction Type TransistorToshiba Semiconductor
Toshiba Semiconductor
2SK3650-01LN-CHANNEL SILICON POWER MOSFETFuji Electric
Fuji Electric
2SK3650-01SN-CHANNEL SILICON POWER MOSFETFuji Electric
Fuji Electric
2SK3650-01SJN-CHANNEL SILICON POWER MOSFETFuji Electric
Fuji Electric

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar