|
|
Número de pieza | IPA028N08N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPA028N08N3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary
VDS
RDS(on),max
ID
80 V
2.8 mW
89 A
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
89
T C=100 °C
62
Pulsed drain current3)
I D,pulse T C=25 °C
352
Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W
1430
Gate source voltage
V GS
±20
Power dissipation
P tot T C=25 °C
42
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)J-STD20 and JESD22
2) Current is limited by package; with an RthJC=0.5K/W in a standard TO-220 package the chip is able
to carry 251A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2013-08-26
1 page IPA028N08N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
350
7V
10 V
300
6V
250
5.5 V
200
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
8
4.5 V
5V
6
5.5 V
150
5V
100
50 4.5 V
4
2
6V
10 V
7V
0
012345
VDS [V]
0
0 50 100 150 200 250 300 350
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
240
250 200
200 160
150 120
100
50
175 °C
25 °C
80
40
0
0
Rev. 2.1
246
VGS [V]
0
80
page 5
40 80 120
ID [A]
160
2013-08-26
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPA028N08N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPA028N08N3G | Power-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |