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Número de pieza | ME9435A | |
Descripción | 30V P-Channel Enhancement Mode MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME9435A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435A is the P-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and lower power loss that are needed in a
very small outline surface mount package.
ME9435A
FEATURES
1. -30V/-5.3A, RDS(ON)=40mΩ@VGS=-10V
2. -30V/-4.2A, RDS(ON)=60mΩ@VGS=-4.5V
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃
Pulsed Drain Current 1)
Maximum Power Dissipation
TA=25℃
Operating Junction Temperature
www.DataSheet4U.com
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
RθJA
10 secs Steady State
-30
±20
-5.3
-20
2.5
-55 to 150
28
T≦10 sec
34
Steady State
62
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
℃/W
Apr, 2007-Ver3.0
01
1 page 30V P-Channel Enhancement Mode MOSFET
SOP-8 Package Outline
ME9435A
www.DataSheet4U.com
Apr, 2007-Ver3.0
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME9435A.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME9435 | 30V P-Channel Enhancement Mode MOSFET | Matsuki |
ME9435A | 30V P-Channel Enhancement Mode MOSFET | Matsuki |
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