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Número de pieza | LP6872 | |
Descripción | 0.5W POWER PHEMT | |
Fabricantes | Filtronic Compound Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LP6872 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! • FEATURES
♦ 27 dBm Output Power at 1-dB
Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (2X)
LP6872
0.5W POWER PHEMT
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.6X19.7 mils (370x500 µm)
DIE THICKNESS: 3.0 mils (75 µm)
BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation.
Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital
radio transmitters.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
IDSS
P-1dB
G-1dB
PAE
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
ΘJC
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 4 mA
IGS = 4 mA
IGD = 4 mA
Min Typ Max Units
180 245 260 mA
25 27
dBm
8 9.5
dB
55 %
385 mA
175 220
mS
5 40 µA
-0.25 -1.2 -2.0
V
-10 -13
V
-10 -14
V
70 °C/W
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/18/01
Email: [email protected]
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LP6872.PDF ] |
Número de pieza | Descripción | Fabricantes |
LP6872 | 0.5W POWER PHEMT | Filtronic Compound Semiconductors |
LP6872 | 0.5W POWER PHEMT | Filtronic Compound Semiconductors |
LP6872P100 | Packaged 0.5W Power PHEMT | Filtronic Compound Semiconductors |
LP6872P100 | Packaged 0.5W Power PHEMT | Filtronic Compound Semiconductors |
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