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Número de pieza | 2SK3907 | |
Descripción | Switching Regulator Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3907
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS = 500 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
23
92
150
552
23
15
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.77 mH, IAR = 23 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2008-12-27
1 page 2SK3907
www.DataSheet4U.com
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10 μ
100 μ
SINGLE PULSE
1 m 10 m
PDM
t
T
100 m
Duty = t/T
Rth (ch-c) = 0.833°C/W
1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
1000
ID max (PULSE) *
100
ID max (CONTINUOUS)
10
1 ms *
100 μs *
DC OPERATION
1 Tc = 25℃
0.1
*: SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.01
1
10
VDSS max
100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 1.77 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2008-12-27
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK3907.PDF ] |
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