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PDF IXGH50N90B2 Data sheet ( Hoja de datos )
| Número de pieza | IXGH50N90B2 | |
| Descripción | HiPerFAST IGBT B2-Class High Speed IGBTs | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
HiPerFASTTM IGBT
B2-Class High Speed IGBTs
IXGH 50N90B2
IXGT 50N90B2
VCES
IC25
VCE(sat)
tfi typ
www.DataSheet4U.com
= 900 V
= 75 A
= 2.7 V
= 200 ns
Symbol
Test Conditions
V
CES
VCGR
VGES
VGEM
IC25
I
C110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
PC TC = 25°C
T
J
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
900 V
900 V
±20 V
±30 V
75 A
50 A
200 A
ICM = 100
A
400
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
V
GE(th)
ICES
IGES
V
CE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC
=
I,
C110
VGE
=
15
V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 125°C
50 µA
1 mA
±100 nA
2.2 2.7 V
V
TO-247
(IXGH)
TO-268
(IXGT)
G
CE
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High frequency IGBT
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99377(04/05)
1 page  
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
600
550 td(off)
tfi - - - - - -
500 RG = 5 Ω
450 VGE = 15V
IC = 25A
50A
100A
400 VCE = 720V
350
300
250 IC = 100A
200 50A
25A
150
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 15. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
10
0
5 10 15 20 25 30 35 40
VC E - Volts
IXGH 50N90B2
IXGT 50N90B2
www.DataSheet4U.com
Fig. 14. Gate Charge
15
13.5
12
10.5
VCE = 450V
I C = 50A
I G= 10mA
9
7.5
6
4.5
3
1.5
0
0 20 40 60 80 100 120 140
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
110
100
90
80
70
60
50
40
30 TJ = 125ºC
20 RG = 10Ω
10 dV/dT < 10V/ns
0
100 200 300 400 500 600 700 800 900
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
1
0.1
0.01
0.1
© 2004 IXYS All rights reserved
1
10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGH50N90B2.PDF ] | |
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