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Número de pieza | MRFG35020AR1 | |
Descripción | Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
Fabricantes | Freescale Semiconductor | |
Logotipo | ||
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Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX and WLL base station applications that have a 200 MHz
BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and
CDMA amplifier applications. To be used in Class AB applications.
•
Typical WiMAX Performance:
Avg., f = 3500 MHz, 802.16d,
Bandwidth, Input Signal PAR
=6V49D.DQ5=AdMB12@3V/4o0, l.4t0s1,b%IuDrQsPts=ro, 3b70aM0biHmlitzyAC,ohPnaoCuntCn=eDl2F.Watts
Power Gain — 11.5 dB
Drain Efficiency — 22%
RCE — - 33 dB
Meets ETSI Type G Mask
• 20 Watts P1dB @ 3500 MHz, CW
Features
• Supports up to 28 MHz Bandwidth OFDM Signals
• Internally Input Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Excellent Thermal Stability
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Document Number: MRFG35020A
Rev. 0, 1/2008
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MRFG35020AR1
3.5 GHz, 20 W, 12 V
WiMAX
POWER FET
GaAs PHEMT
CASE 360E - 01, STYLE 2
NI - 360 SHORT LEAD
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
VDSS
VGS
Pin
Tstg
Tch
TC
15
-5
34
- 40 to +175
175
- 40 to +90
Vdc
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
RθJC 2.7 °C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C. Exceeding 150°C channel operating temperature may
result in device performance degradation.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35020AR1
1
1 page TYPICAL CHARACTERISTICS
16
VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
14 ΓS = 0.697é−153.9_, ΓL = 0.949é−166.7_
12
Gps
10
60
50
40
30
8
ηD
6
20
10
40
20 22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER (dBm)
Figure 3. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
0
VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−10 ΓS = 0.697é−153.9_, ΓL = 0.949é−166.7_
−5
−10
−20
IRL
−30
−15
−20
−40
ACPR
−25
−50 −30
20 22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
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NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35020AR1
5
5 Page PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
Date
Jan. 2008
• Initial Release of Data Sheet
Description
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRFG35020AR1
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet MRFG35020AR1.PDF ] |
Número de pieza | Descripción | Fabricantes |
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