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PDF APT100GT60B2R Data sheet ( Hoja de datos )
| Número de pieza | APT100GT60B2R | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
Low EMI, High Reliability
• RoHS Compliant
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
APT100wGwwT.D6at0aSBhe2et4RU.c(oGm )
APT100GT60LR(G)
600V, 100A, VCE(ON) = 2.1V Typical
GCE
GCE
G
C
E
Maximum Ratings
Symbol Parameter
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2
ICM
SSOA
PD
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
TJ, TSTG Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
600
Volts
±30
148
80 Amps
300
300A @ 600V
500
Watts
-55 to 150
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)
Gate Threshold Voltage (VCE = VGE, IC = 1.5mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±30V)
Min Typ Max Unit
600 -
-
345
Volts
1.7 2.1 2.5
- 2.5 -
- - 25
μA
- - 1000
- - 300 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10,000
5,000
Cies
1,000
500
C0es
Cres
100 0
10 20 30
40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT100GT60B2R_LR(G)
350 www.DataSheet4U.com
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
0.0587
0.132
0.0587
0.0120
0.420
4.48
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
100
50
TC = 75°C
F
max
=
min
(fmax,
f
max2)
10
5
TJ = 125°C
D = 50 %
VCE = 400V
1 RG = 4.3Ω
TC = 100°C
0.05
fmax1 = t d(on) + tr + td(off) + tf
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT100GT60B2R.PDF ] | |
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