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Número de pieza | PBSS5160DS | |
Descripción | 60V 1A PNP/PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Rev. 03 — 9 October 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
-
[1] -
-
[2] -
- −60 V
- −1 A
- −2 A
250 330 mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page NXP Semiconductors
PBSS5160DSwww.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10 0.02
0.01
006aaa495
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10
0.02
0.01
006aaa496
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5160DS_3
Product data sheet
Rev. 03 — 9 October 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page NXP Semiconductors
11. Soldering
PBSS5160DSwww.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
3.45
1.95
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 16. Reflow soldering footprint SOT457 (SC-74)
5.3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 17. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PBSS5160DS_3
Product data sheet
Rev. 03 — 9 October 2008
© NXP B.V. 2008. All rights reserved.
11 of 14
11 Page |
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Número de pieza | Descripción | Fabricantes |
PBSS5160DS | 60V 1A PNP/PNP low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS5160DS | 60V 1A PNP/PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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