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PDF MEN09N03BJ3 Data sheet ( Hoja de datos )
| Número de pieza | MEN09N03BJ3 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MEN09N03BJ3 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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CYStech Electronics Corp.
Specw. Nwow. :.DCa43ta0SJh3eet4U.com
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 1/7
N-Channel Logic Level Enhancement Mode Power MOSFET
MEN09N03BJ3
Features
• VDS=30V, ID=50A, RDS(ON)=9mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
• Repetitive Avalanche Rated
• Fast Switching Characteristic
BVDSS 30V
ID 50A
RDSON 9mΩ
Symbol
MEN09N03BJ3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Power Dissipation (TC=25℃)
Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
50
35
140 *1
37.5
70
15 *2
60
32
-55~+175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle≤1%
Unit
V
V
A
A
A
A
mJ
mJ
W
W
°C
MEN09N03BJ3
CYStek Product Specification
1 page  
Reel Dimension
CYStech Electronics Corp.
Specw. Nwow. :.DCa43ta0SJh3eet4U.com
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 5/7
Carrier Tape Dimension
MEN09N03BJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MEN09N03BJ3.PDF ] | |
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