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PDF MRF8S9200NR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S9200NR3 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• BT14yap0ni0dcwamlidASt,ihnPg=oleu3t-.=8C4a5r8MriWHerzaW,ttIsn-pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRmnita=und7ce.e5:CdVliBpDpD@in=g02,.80C1Vh%aonltPsn,reoIlDbQab=ility
on CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.9 37.7
19.9 37.1
19.5 36.8
6.1 - 36.2
6.1 - 36.6
6.0 - 36.0
Document Number: MRF8S9200N
Rev. 0, 8/2009
MRF8S9200NR3
920 - 960 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 200 Watts CW
Output Power (3 dB Input
Enhanced Ruggedness
Overdrive
from
Rated
Pout),
Designed
for
• Typical Pout @ 1 dB Compression Point ] 200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021 - 01, STYLE 1
OM - 780 - 2
PLASTIC
www.DataSTahebelet4U1.cMomaximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +70
- 6.0, +10
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW
Case Temperature 80°C, 200 W CW
RθJC
0.30
0.25
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
1
1 page  
TYPICAL CHARACTERISTICS
21
20.5
20 ηD
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
44
42
40
19.5 Gps
19
18.5 IRL
18
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
38
36
−30
−32
17.5
ACPR
17
−34
−36
16.5
PARC
16
−38
−40
800 825 850 875 900 925 950 975 1000
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
−5
−10
−15
−20
−25
−30
www.DataSheet4U.com
−10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 940 MHz
IM3−U
−30
IM3−L IM5−U
−40
IM5−L
IM7−L
−50
IM7−U
−60
1
10 100
TWO−TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two - Tone Spacing
20 1
19.5 0 Gps
55 −20
50 −25
19 −1 PARC
−1 dB = 49.04 W
18.5 −2
ηD
ACPR
−3 dB = 95.95 W
45
40
−30
−35
18 −3
−2 dB = 69.69 W
35 −40
17.5 −4 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz
30 −45
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17 −5
25 −50
30 50 70 90 110 130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
−0.5
−1
−1.5
−2
−2.5
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MRF8S9200NR3.PDF ] | |
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