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Número de pieza | SPA11N60CFD | |
Descripción | CoolMOS Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPA11N60CFD (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC0) for target applications
Product Summary
V DS
R DS(on),max
I
1)
D
SPA11N60CFD
600 V
0.44 Ω
11 A
PG-TO220-3-31
Type
SPA11N60CFD
Package
TO-220-3-31
Ordering Code
SP000216317
Marking
11N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
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ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive2),3)
Avalanche current, repetitive2),3)
Drain source voltage slope
I D,pulse
E AS
E AR
I AR
dv /dt
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=5.5 A, V DD=50 V
I D=11 A, V DD=50 V
I D=11 A, V DS=480 V,
T j=125 °C
I S=11 A, V DS=480 V,
T j=125 °C
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Rev. 1.2
page 1
Value
11
7
28
340
0.6
11
80
40
600
±20
±30
33
-55 ... 150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
2006-05-15
1 page 1 Power dissipation
P tot=f(T C)
35
30
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
SPA11N60CFD
1 µs
25 10 µs
101
100 µs
20
1 ms
15 10 ms
100 DC
10
5
0
0 40 80 120
T C [°C]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
parameter: D=t p/T
www.DataSheet4U.com101
10-1
160 100
101 102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: tp = 10µs V GS
35
103
100
10-1
0.5
0.2
0.1
0.05
0.02
0.01
30
25
20
15
10-2
single pulse
10
5
10-3
10-6 10-5 10-4 10-3 10-2 10-1 100 101
t p [s]
0
0
Rev. 1.2
page 5
20 V
10 V
8V
7V
6.5 V
6V
5.5 V
5V
5 10 15
V DS [V]
20
2006-05-15
5 Page PG-TO-220-3-31 (FullPAK)
SPA11N60CFD
www.DataSheet4U.com
Rev. 1.2
page 11
2006-05-15
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SPA11N60CFD.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPA11N60CFD | CoolMOS Power Transistor | Infineon Technologies |
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