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PDF TPC8041 Data sheet ( Hoja de datos )
| Número de pieza | TPC8041 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8041
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8041
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
www.DataShAeveatl4aUnc.choemcurrent
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
13
52
1.9
1.0
44
13
0.066
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
1234
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2008-06-24
1 page  
20
Common source
Pulse test
16
RDS (ON) – Ta
ID = 6.5 A
12
13
3
VGS = 4.5 V
8
ID = 3, 6.5, 13 A
4
VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8041
100
10
10
IDR – VDS
4.5
3
1
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4 −0.6 −0.8
−1 −1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
www.DataSheet4U.com Drain−source voltage VDS
(V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 13 A
Ta = 25°C
40 Pulse test
30
VDS =24 V
6
12
VDD =24 V
20
12
10
6
0
0 10 20 30 40
Total gate charge Qg (nC)
20
16
12
8
4
0
50
5 2008-06-24
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8041.PDF ] | |
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