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PDF SMT810 Data sheet ( Hoja de datos )
| Número de pieza | SMT810 | |
| Descripción | High Performance Infrared TOP IR LED | |
| Fabricantes | ETC | |
| Logotipo |  |
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SMT810 High Performance Infrared TOP IR LED
SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10mW typical of output power.
It emits a spectral band of radiation at 810nm.
♦Outer dimension（Unit:mm）
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
TOP IR LED
SMT810
AlGaAs
810ｎｍ ｔｙｐ.
Silver Plated
PPA Resin
Epoxy Resin
♦Absolute Maximum Rating
Item Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
190 mW Ta=25°C
Forward Current
IF
100 mA Ta=25°C
Pulse Forward Current
IFP
500 mA Ta=25°C
Reverse Voltage
VR
5 V Ta=25°C
Operating Temperature
TOPR
-20 ~ +80
°C
Storage Temperature
TSTG
-30 ~ +80
°C
Soldering Temperature
TSOL
240
°C
www.DataShe‡ePt4Uu.lcsoemForward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C
♦Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
VF IF=50mA
Reverse Current
IR VR=5V
Total Radiated Power
PO IF=50mA
5.0
Radiant Intensity
IE IF=50mA
3.0
Peak Wavelength
λP IF=50mA
Half Width
Δλ IF=50mA
Viewing Half Angle
Rise Time
Fall Time
θ 1/2 IF=50mA
tr ＩF=50mA
tf ＩF=50mA
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.60
10.0
6.0
810
40
±55
60
40
Maximum
1.80
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
Marubeni America Corporation
3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054
408-330-0650 (Ext. 323), 408-330-0655 (Fax), [email protected]
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet SMT810.PDF ] | |
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