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Número de pieza | LMV834 | |
Descripción | (LMV831 - LMV834) EMI Hardened Operational Amplifiers | |
Fabricantes | National Semiconductor | |
Logotipo | ||
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October 6, 2008
LMV831 Single/ LMV832 Dual/ LMV834 Quad
3.3 MHz Low Power CMOS, EMI Hardened Operational
Amplifiers
General Description
National’s LMV831, LMV832, and LMV834 are CMOS input,
low power op amp IC's, providing a low input bias current, a
wide temperature range of −40°C to 125°C and exceptional
performance making them robust general purpose parts. Ad-
ditionally, the LMV831/LMV832/LMV834 are EMI hardened
to minimize any interference so they are ideal for EMI sensi-
tive applications.
The unity gain stable LMV831/LMV832/LMV834 feature
3.3 MHz of bandwidth while consuming only 0.24 mA of cur-
rent per channel. These parts also maintain stability for ca-
pacitive loads as large as 200 pF. The LMV831/LMV832/
LMV834 provide superior performance and economy in terms
of power and space usage.
This family of parts has a maximum input offset voltage of
1 mV, a rail-to-rail output stage and an input common-mode
voltage range that includes ground. Over an operating range
from 2.7V to 5.5V the LMV831/LMV832/LMV834 provide a
PSRR of 93 dB, and a CMRR of 91 dB. The LMV831 is offered
in the space saving 5-Pin SC70 package, the LMV832 in the
8-Pin MSOP and the LMV834 is offered in the 14-Pin TSSOP
package.
Features
Unless otherwise noted, typical values at TA= 25°C,
V+ = 3.3V
■ Supply voltage
■ Supply current (per channel)
■ Input offset voltage
■ Input bias current
■ GBW
■ EMIRR at 1.8 GHz
■ Input noise voltage at 1 kHz
■ Slew rate
■ Output voltage swing
■ Output current drive
■ Operating ambient temperature range
2.7V to 5.5V
240 µA
1 mV max
0.1 pA
3.3 MHz
120 dB
12 nV/√Hz
2 V/µs
Rail-to-Rail
30 mA
−40°C to 125°C
Applications
■ Photodiode preamp
■ Piezoelectric sensors
■ Portable/battery-powered electronic equipment
■ Filters/buffers
■ PDAs/phone accessories
Typical Application
EMI Hardened Sensor Application
© 2008 National Semiconductor Corporation 300241
30024101
www.national.com
1 page Symbol
Parameter
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Conditions
in
ROUT
CIN
THD+N
Input Referred Current Noise
Closed Loop Output Impedance
Common-mode Input Capacitance
Differential-mode Input Capacitance
Total Harmonic Distortion + Noise
f = 1 kHz
f = 2 MHz
f = 1 kHz, AV = 1, BW ≥ 500 kHz
Min
(Note 6)
Typ
(Note 5)
0.005
500
14
20
0.02
Max
(Note 6)
Units
pA/
Ω
pF
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
TJ > TA.
Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality
control (SQC) method.
Note 7: Number specified is the slower of positive and negative slew rates.
Note 8: The EMI Rejection Ratio is defined as EMIRR = 20log ( VRF_PEAK/ΔVOS).
Note 9: The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting distribution.
Note 10: This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 11: The specified limits represent the lower of the measured values for each output range condition.
Connection Diagrams
5-Pin SC-70
8-Pin MSOP
14-Pin TSSOP
Top View
30024102
Ordering Information
Package
5-Pin SC-70
8-Pin MSOP
14-Pin TSSOP
Part Number
LMV831MG
LMV831MGE
LMV831MGX
LMV832MM
LMV832MME
LMV832MMX
LMV834MT
LMV834MTX
Top View
30024103
Top View
30024104
Package Marking
AFA
AU5A
LMV834MT
Transport Media
1k Units Tape and Reel
250 Units Tape and Reel
3k Units Tape and Reel
1k Units Tape and Reel
250 Units Tape and Reel
3.5k Units Tape and Reel
94 Units/Rail
2.5k Units Tape and Reel
NSC Drawing
MAA05A
MUA08A
MTC14
5 www.national.com
5 Page www.DataShSemeat4lUl S.ciogmnal Step Response with Gain = 1
Small Signal Step Response with Gain = 10
30024140
Slew Rate vs. Supply Voltage
30024141
Input Voltage Noise vs. Frequency
THD+N vs. Frequency
30024142
THD+N vs. Amplitude
30024144
30024145
11
30024146
www.national.com
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet LMV834.PDF ] |
Número de pieza | Descripción | Fabricantes |
LMV831 | LMV831 Single / LMV832 Dual / LMV834 Quad 3.3-MHz Low-Power CMOS EMI-Hardened Operational Amplifiers (Rev. C) | Texas Instruments |
LMV831 | (LMV831 - LMV834) EMI Hardened Operational Amplifiers | National Semiconductor |
LMV832 | LMV831 Single / LMV832 Dual / LMV834 Quad 3.3-MHz Low-Power CMOS EMI-Hardened Operational Amplifiers (Rev. C) | Texas Instruments |
LMV832 | (LMV831 - LMV834) EMI Hardened Operational Amplifiers | National Semiconductor |
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