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PDF STB85N15F4 Data sheet ( Hoja de datos )

Número de pieza STB85N15F4
Descripción Power MOSFET ( Transistor )
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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Features
STB85N15F4
STP85N15F4
N-channel 150 V, 0.015 , 85 A TO-220, D2PAK
STripFET™ DeepGATE™ Power MOSFET
Preliminary Data
Type
STB85N15F4
STP85N15F4
VDSS
150 V
150 V
RDS(on) max
< 0.019
< 0.019
ID
85 A
85 A
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Application
Switching applications
Description
This Power MOSFET is among the latest
developments that use an advanced technology
(STripFET™ DeepGATE™ technology), which
has been especially tailored to minimize on-state
resistance, provide superior switching
performance and withstand high energy pulse in
avalanche and commutation mode. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB85N15F4
STP85N15F4
Marking
85N15F4
85N15F4
Package
D²PAK
TO-220
Packaging
Tape and reel
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 85 A, VGS = 0
ISD = 85 A, VDD = 25 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 4)
85
340
TBD
A
A
V
TBD
TBD
TBD
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12

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6 Revision history
Table 8. Document revision history
Date
Revision
12-Jan-2009
1 First release
Revision history
Changes
11/12

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