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PDF STB30N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STB30N65M5 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STx30N65M5
N-channel 650 V, 0.130 Ω, 21 A, MDmesh™ V Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Preliminary Data
Features
Type
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
VDSS @
TJMAX
710 V
710 V
710 V
710 V
710 V
RDS(on) max
ID
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
21 A
21 A(1)
21 A
21 A
21 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)*area
■ Higher VDSS rating
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
■ High dv/dt capability
Application
■ Switching applications
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes
Marking
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 325 V, ID = 10.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
Min. Typ. Max Unit
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 21 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 7)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 7)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
21 A
84 A
1.5 V
TBD
TBD
TBD
ns
nC
A
TBD
TBD
TBD
ns
nC
A
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Dim
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
Package mechanical data
I²PAK (TO-262) mechanical data
mm inch
Min Typ Max Min Typ Max
4.40
4.60
0.173
0.181
2.40
2.72
0.094
0.107
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
0.49
0.70
0.019
0.027
1.23
1.32
0.048
0.052
8.95
9.35
0.352
0.368
2.40
2.70
0.094
0.106
4.95
5.15
0.194
0.202
10
10.40
0.393
0.410
13
14 0.511
0.551
3.50
3.93
0.137
0.154
1.27
1.40
0.050
0.055
11/15
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