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PDF IXTQ44N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ44N50P | |
| Descripción | Polar N-channel MOSFETs | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Advance Technical Information
IXTQ 44N50P
VDSS =
ID25 =
<RDS(on)
500 V
44 A
140 mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque(TO-247)
TO-3P
Maximum Ratings
500 V
500 V
TO-3P (IXTQ)
±30 V
44 A
132 A
G
44 A
DS
55 mJ
1.7 J
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
650
-55 ... +150
150
-55 ... +150
300
260
W Features
°C
°C z International standard packages
°C z Unclamped Inductive Switching (UIS)
°C
°C
rated
z Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
6g
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250µA
Characteristic Values
Min. Typ.
Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±10 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
140 mΩ
© 2005 IXYS All rights reserved
DS99364(03/05)
1 page  
www.DataSheet4U.com
1.00
Fig. 13. Maximum Transient Thermal Resistance
IXTQ 44N50P
0.10
0.01
0.1
1 10 100
PulseWidth- milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ44N50P.PDF ] | |
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