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Número de pieza | EIC4450-10 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIC4450-10 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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UPDATED 07/25/2007
EIC4450-10
4.40-5.00 GHz 10-Watt Internally Matched Power FET
FEATURES
• 4.40–5.00GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.5 dBm Output Power at 1dB Compression
• 10.0 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• -46 dBc IM3 at PO = 29.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 4.40-5.00GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 4.40-5.00GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 5.00GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 60 mA
Note: 1. Tested with 50 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
39.5
9.0
-43
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
CONTINUOUS2
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-4.5V
Ids Drain Current
Idss
Igsf Forward Gate Current 120mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
@ 3dB Compression
150 oC
-65 to +150 oC
Pt Total Power Dissipation 42W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
40.5
10.0
35
3300
-46
5800
-2.5
2.5
MAX
±0.6
3800
UNITS
dBm
dB
dB
%
mA
dBc
6400
-4.0
3.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC4450-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC4450-10 | Internally Matched Power FET | Excelics Semiconductor |
EIC4450-15 | 4.40-5.00GHz 15-Watt Internally Matched Power FET | Excelics Semiconductor |
EIC4450-15 | 4.40-5.00GHz 15-Watt Internally Matched Power FET | Excelics Semiconductor |
EIC4450-18 | Internally Matched Power FET | Excelics Semiconductor |
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